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AM0912-150
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
.REFRACTORY/ .EMI .LOW .I .OVERLAY .METAL/ .P .BANDWI
G OLD METALLIZATION T TER SITE BALLASTED THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY CERAMIC HERMETIC PACKAGE OUT = 150 W MIN. WITH 7.5 dB GAIN DTH = 255MHz
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM0912-150 BRANDING 0912-150
PIN CONNECTION
DESCRIPTION The AM0912-150 is designed for specialized avionics applications including Mode-S, TCAS and JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0912-150 is housed in the unique BIGPACTM Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC 100C)
300 16.5 35 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.57 C/W
*Applies only to rated RF amplifier operation
September 1992
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AM0912-150
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCES ICES hFE DYNAMIC
Symbol
IC = 60mA IE = 10mA IC = 100mA VCE = 35V VCE = 5V
IE = 0mA IC = 0mA
55 3.5 55 --
65 -- -- -- --
-- -- -- 25 --
V V V mA --
IC = 5A
20
Test Conditions
Value Min. Typ. Max.
Unit
POUT c GP
Note:
f = 960 -- 1215MHz f = 960 -- 1215MHz f = 960 -- 1215MHz
PIN = 26.7W PIN = 26.7W PIN = 26.7W
VCC = 35V VCC = 35V VCC = 35V
150 45 7.5
-- -- --
-- -- --
W % dB
Pulse Format: 6.4 S on 6.6 S off; repeat for 3.3 ms, then off for 4.5125 ms Duty Cycle: Burst 49.2% overall 20.8%
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AM0912-150
TYPICAL PERFORMANCE TYPICAL POWER INPUT, POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY
POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
VCC = 28-35V PIN 26W TC < 45C
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AM0912-150
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ZIN
PIN = 26.7 W VCC = 35 V ZO* = 10 ohms
FREQ. L = 960 MHz * = 1000 MHz M = 1050 MHz * = 1150 MHz H = 1215 MHz TYPICAL COLLECTOR LOAD IMPEDANCE
ZIN () 2.1 + j 3.8 1.5 + j 3.1 1.2 + j 2.5 1.5 + j 2.4 1.7 + j 2.4
ZCL () 3.8 - j 3.6 3.0 - j 2.4 2.5 - j 2.0 2.0 - j 2.0 2.0 - j 2.5
ZCL
PIN = 26.7 W VCC = 35 V ZO* = 10 ohms
*Normalized Impedance
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AM0912-150
TEST CIRCUIT Ref: Dwg. No. C127513
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AM0912-150
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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